POWER MOSFET THRU-HOLE (TO-257AA)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically

文件：167.81 Kbytes 页数：7 Pages

IRF

Simple Drive Requirements

文件：167.81 Kbytes 页数：7 Pages

IRF

N-Channel MOSFET in a Hermetically sealed

文件：15.61 Kbytes 页数：1 Pages

SEME-LAB

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically

文件：338.54 Kbytes 页数：6 Pages

IRF

POWER MOSFET THRU-HOLE (TO-257AA)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically

文件：167.81 Kbytes 页数：7 Pages

IRF

Simple Drive Requirements

文件：167.81 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

\n优势:;

Infineon

英飞凌

HiRel MOSFETs

\n优势:;

Infineon

英飞凌