Simple Drive Requirements Ease of Paralleling Hermetically Sealed

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically

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IRF

N-Channel MOSFET in a Hermetically sealed

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SEME-LAB

POWER MODULE

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IRI

Advanced Power MOSFET

BVDSS = 100 V RDS(on) = 0.12Ω ID = 13 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.101Ω (Typ.)

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

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ISC

无锡固电