1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

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INTERSIL

Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A)

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc

文件：182.26 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤5.5mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.29 Kbytes 页数：2 Pages

ISC

无锡固电

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

文件：4.166479 Mbytes 页数：11 Pages

KERSEMI

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

文件：4.17531 Mbytes 页数：11 Pages

KERSEMI

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：4.26019 Mbytes 页数：11 Pages

KERSEMI

HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 5.5m廓 , ID = 42A )

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

文件：273.67 Kbytes 页数：12 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤45mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.94 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：3.74603 Mbytes 页数：10 Pages

KERSEMI

55V N-Channel MOSFET

Description Ultra Low On-Resistance Fast Switching Fully Avalanche Rated Lead-Free VDS(V) = 50V ID = 27A (VGS = 10V) RDS(ON)

文件：490.14 Kbytes 页数：7 Pages

UMW

友台半导体