Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)

VDSS = 55V RDS(on) = 0.075Ω ID = 19A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These be

文件：345.03 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)

VDSS = 55V RDS(on) = 0.075Ω ID = 19A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These be

文件：345.03 Kbytes 页数：8 Pages

IRF

Switching Regulator Applications

文件：416.22 Kbytes 页数：6 Pages

TOSHIBA

东芝

LINEAR INTEGRATED CIRCUIT

文件：160.11 Kbytes 页数：4 Pages

Samsung

三星