首页 >IRFR330>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

IRFR330

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件:671.71 Kbytes 页数:9 Pages

Fairchild

仙童半导体

IRFR3303

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:112.95 Kbytes 页数:10 Pages

IRF

IRFR3303

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:1.89695 Mbytes 页数:10 Pages

KERSEMI

IRFR3303PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:3.84104 Mbytes 页数:10 Pages

KERSEMI

IRFR3303PBF

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:3.86139 Mbytes 页数:10 Pages

KERSEMI

IRFR3303PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:251.95 Kbytes 页数:10 Pages

IRF

IRFR330B

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件:671.71 Kbytes 页数:9 Pages

Fairchild

仙童半导体

IRFR3303PBF

ULTRA LOW ON RESISTANCE

文件:256.459 Kbytes 页数:11 Pages

IRF

IRFR3303PBF_15

ULTRA LOW ON RESISTANCE

文件:256.459 Kbytes 页数:11 Pages

IRF

IRFR3303TRL

Ultra Low On-Resistance

文件:6.23075 Mbytes 页数:10 Pages

KERSEMI

技术参数

  • Package :

    DPAK (TO-252)

  • VDS max:

    30.0V

  • RDS (on) max:

    31.0mΩ

  • RDS (on)(@10V) max:

    31.0mΩ

  • Polarity :

    N

  • ID (@ TC=100°C) max:

    21.0A

  • ID  max:

    21.0A

  • ID (@ TC=25°C) max:

    33.0A

  • Ptot max:

    57.0W

  • QG :

    19.3nC 

  • Mounting :

    SMD

  • Tj max:

    150.0°C

  • Moisture Sensitivity Level :

    1

  • Qgd :

    8.7nC 

  • RthJC max:

    2.2K/W

  • VGS max:

    20.0V

供应商型号品牌批号封装库存备注价格
IR
05+
TO-252
15000
原装进口
询价
IR
22+
TO-252
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-252
8000
只做原装现货
询价
IR
23+
TO-252
7000
询价
INTERNATIONA
24+/25+
3000
原装正品现货库存价优
询价
IR
25+
PLCC-44
18000
原厂直接发货进口原装
询价
IR
24+
TO-252
36800
询价
IOR
24+
TO252
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
IR
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
询价
IR
23+
DPAK
5000
原装正品,假一罚十
询价
更多IRFR330供应商 更新时间2025-12-7 9:17:00