| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFR330 | 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件:671.71 Kbytes 页数:9 Pages | Fairchild 仙童半导体 | Fairchild | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:112.95 Kbytes 页数:10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:1.89695 Mbytes 页数:10 Pages | KERSEMI | KERSEMI | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:3.84104 Mbytes 页数:10 Pages | KERSEMI | KERSEMI | ||
ULTRA LOW ON-RESISTANCE Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:3.86139 Mbytes 页数:10 Pages | KERSEMI | KERSEMI | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:251.95 Kbytes 页数:10 Pages | IRF | IRF | ||
400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件:671.71 Kbytes 页数:9 Pages | Fairchild 仙童半导体 | Fairchild | ||
ULTRA LOW ON RESISTANCE 文件:256.459 Kbytes 页数:11 Pages | IRF | IRF | ||
ULTRA LOW ON RESISTANCE 文件:256.459 Kbytes 页数:11 Pages | IRF | IRF | ||
Ultra Low On-Resistance 文件:6.23075 Mbytes 页数:10 Pages | KERSEMI | KERSEMI |
技术参数
- Package :
DPAK (TO-252)
- VDS max:
30.0V
- RDS (on) max:
31.0mΩ
- RDS (on)(@10V) max:
31.0mΩ
- Polarity :
N
- ID (@ TC=100°C) max:
21.0A
- ID max:
21.0A
- ID (@ TC=25°C) max:
33.0A
- Ptot max:
57.0W
- QG :
19.3nC
- Mounting :
SMD
- Tj max:
150.0°C
- Moisture Sensitivity Level :
1
- Qgd :
8.7nC
- RthJC max:
2.2K/W
- VGS max:
20.0V
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
05+ |
TO-252 |
15000 |
原装进口 |
询价 | ||
IR |
22+ |
TO-252 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-252 |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
TO-252 |
7000 |
询价 | |||
INTERNATIONA |
24+/25+ |
3000 |
原装正品现货库存价优 |
询价 | |||
IR |
25+ |
PLCC-44 |
18000 |
原厂直接发货进口原装 |
询价 | ||
IR |
24+ |
TO-252 |
36800 |
询价 | |||
IOR |
24+ |
TO252 |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
IR |
12+ |
TO-252(DPAK) |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
IR |
23+ |
DPAK |
5000 |
原装正品,假一罚十 |
询价 |
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