首页>IRFR3303PBF>规格书详情
IRFR3303PBF中文资料PDF规格书
IRFR3303PBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR3303)
● Straight Lead (IRFU3033)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号：
IRFR3303PBF
- 功能描述：
MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IR |
22+ |
TO252 |
15000 |
只做原装进口 免费送样!! |
询价 | ||
ir |
22+ |
500000 |
行业低价,代理渠道 |
询价 | |||
IR |
TO252 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
VISHAY-威世 |
24+25+/26+27+ |
TO-252-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IR |
2122+ |
TO252 |
66000 |
全新原装正品,价格美丽,优势渠道 |
询价 | ||
IR |
22+ |
TO252 |
9000 |
原装正品 |
询价 | ||
IR |
TO252 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
IR |
17+ |
TO-252 |
6200 |
询价 | |||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 |
