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IRFR13N15DTRPBF

High frequency DC-DC converters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFR13N15DTRPBF

N-Channel 150 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

IIRFR13N15D

N-ChannelMOSFETTransistor

•DESCRITION •HighfrequencyDC-DCconverters •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤180mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IRFR13N15D

SMPSMOSFET

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

IRFR13N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.18ohm,Id=14A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFR13N15D

N-ChannelMOSFETTransistor

•DESCRITION •HighfrequencyDC-DCconverters •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤180mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IRFR13N15DPBF

SMPSMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

IRFR13N15DPBF

HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFR13N15DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFR13N15DPBF

HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFU13N15D

SMPSMOSFET

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

IRFU13N15D

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IRFU13N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.18ohm,Id=14A)

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFU13N15DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFU13N15DPBF

SMPSMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

IRFU13N15DPBF

HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

KSMD13N15

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

详细参数

  • 型号:

    IRFR13N15DTRPB

  • 功能描述:

    MOSFET MOSFT 150V 14A 180mOhm 19nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/IR
1907+
NA
4000
20年老字号,原装优势长期供货
询价
IR
16+
TO-252
6210
全新原装/深圳现货库2
询价
IR
2020+
DPAK-3
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
INFINEON/英飞凌
20+
TO-252
100
进口原装假一赔十支持含税
询价
INFINEON/英飞凌
22+
TO-252
1000
只做原装进口 免费送样!!
询价
INFINEON
21+
TO252
3200
只做原装,可开税票
询价
IR
22+
DPAK-3
9800
只做原装正品假一赔十!正规渠道订货!
询价
VISHAY
17+
STO252
2000
原装现货实单必成 只做原装!
询价
IR
TO252
7906200
询价
Infineon(英飞凌)
23+
TO-252
9203
支持大陆交货,美金交易。原装现货库存。
询价
更多IRFR13N15DTRPB供应商 更新时间2024-4-27 19:20:00