Excellent package for good heat dissipation.

文件：659.63 Kbytes 页数：4 Pages

KERSEMI

N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.93 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A)

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：128.08 Kbytes 页数：10 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.93 Kbytes 页数：2 Pages

ISC

无锡固电