N-Channel 100-V (D-S) MOSFET

Features @ Ros = 100m @VGS=10V ® Super high density cell design for extremely low RDS(ON) ® Exceptional on-resistance and maximum DC current

文件：2.64174 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques.

Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V)

文件：536.66 Kbytes 页数：7 Pages

UMW

友台半导体

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V)

文件：466.21 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

N-Channel 100 V (D-S) MOSFET

文件：979.62 Kbytes 页数：7 Pages

VBSEMI

微碧半导体