Power MOSFET

文件：838.17 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

文件：263.99 Kbytes 页数：11 Pages

IRF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

文件：4.27158 Mbytes 页数：11 Pages

KERSEMI

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.34 Kbytes 页数：2 Pages

ISC

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