isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：278.18 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A)

DESCRIPTION Third Generation HEXFETs from Internatioal Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120) • Straight Lead

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IRF

1:10 LVCMOS FANOUT BUFFER

The MPC9120 is a 1:10 LVCMOS fanout buffer targeted to support Intel based Pentium II microprocessor chip sets. The device features 10 low skew outputs optimized to drive the clock inputs of standard unbuffered SO–DIMM SDRAM modules. Standard unbuffered SO–DIMM SDRAM modules require two clocks pe

文件：93.35 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Advanced Power MOSFET

文件：228.71 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体