isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：314.14 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：278.18 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

文件：3.88766 Mbytes 页数：10 Pages

KERSEMI

5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs

These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching

文件：73.44 Kbytes 页数：7 Pages

Intersil

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A)

DESCRIPTION Third Generation HEXFETs from Internatioal Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120) • Straight Lead

文件：173.05 Kbytes 页数：6 Pages

IRF