Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：1.77375 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

• Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：1.83546 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世

Avalanche-Energy-Rated P-Channel Power MOSFETs

文件：178.21 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A)

Part Number Rds(on) Id Eyelets IRFY9240C 0.51 Ω -9.4A Ceramic IRFY9240CM 0.51 Ω -9.4A Ceramic HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re

文件：270.98 Kbytes 页数：6 Pages

IRF

P-Channel MOSFET in a Hermetically sealed

文件：15.6 Kbytes 页数：1 Pages

SEME-LAB

Seme LAB