20A, 500V, 0.270 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re • 20A, 500V\n• rDS(ON) = 0.270Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount\n      Components to PC Board;

Renesas

瑞萨

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Isolated central mounting hole;

Vishay

威世

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

Applications • Switch Mode Power Supply ( SMPS ) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and

文件：95.34 Kbytes 页数：8 Pages

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power

文件：144.68 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：212.87 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：212.87 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power level

文件：115.74 Kbytes 页数：8 Pages

IRF

D Series Power MOSFETs

FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (

文件：214.41 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

D Series Power MOSFET

FEATURES • Optimal Design    - Low Area Specific On-Resistance    - Low Input Capacitance (Ciss)    - Reduced Capacitive Switching Losses    - High Body Diode Ruggedness    - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation    - Low Cost    - Simple Gate Drive Circuitry   

文件：186.09 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司