Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Enhanced body diode dV/dt capability • Material categorization: for definitions of compliance ple

文件：228.65 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC BENEFITS

文件：150.15 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dv/dt Capability Applications • Hard Switching Primary or PFS Switch • Switch M

文件：175.95 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：319.79 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：342.34 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：319.79 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：342.34 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

• Low gate charge Qg results in simple drive requirement\n• Improved gate, avalanche and dynamic dV/dt ruggedness\n• Fully characterized capacitance and avalanche voltage and current;

Vishay

威世

Power MOSFET

• Low gate charge Qg results in simple drive requirement\n• Improved gate, avalanche and dynamic dV/dt ruggedness\n• Fully characterized capacitance and avalanche voltage and current;

Vishay

威世

SMPS MOSFET

Infineon

英飞凌