N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors 7.0A and 8.0A, 60V-100V rDS(on) = 0.18 Ω and 0.25 Ω

文件：161.62 Kbytes 页数：5 Pages

GESS

Power MOS Field-Effect Transistors

N-Channel Enhancement-Mode Power Field-Effect Transistors7.0A and 8.0A, 60V-100V rDS(on) = 0.18 Ω and 0.25 Ω

GESS

N-CHANNEL POWER MOSFETS

文件：354.18 Kbytes 页数：6 Pages

Samsung

三星

isc N-Channel MOSFET Transistor

文件：265.38 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8.3A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.91 Kbytes 页数：2 Pages

ISC

无锡固电