0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

Renesas

瑞萨

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • 175 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

文件：825.31 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件：1.52087 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：1.64972 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：825.31 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

HEXFET POWER MOSFET ( VDSS = -100V , RDS(on) = 1.2廓 , ID = -0.70A )

文件：1.79065 Mbytes 页数：8 Pages

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