IRFD9110_V01中文资料威世数据手册PDF规格书

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• For automatic insertion

• End stackable

• P-channel

• Fast switching

• 175 °C operating temperature

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable

case style which can be stacked in multiple combinations on

standard 0.1 pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up

to 1 W.