IRFD9110_V01

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •P-channel •Fastswitching •175°Coperatingtemperature •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

IRFL9110_V01

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerationpower

IRFR9110_V01

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9110,SiHFR9110) •Straightlead(IRFU9110,SiHFU9110) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

MAX9110_V01

Single/DualLVDSLineDriverswithUltra-LowPulseSkewinSOT23

SI9110_V01

High-VoltageSwitchmodeControllers

FEATURES 10-to120-VInputRange Current-ModeControl High-Speed,Source-SinkOutputDrive HighEfficiencyOperation(>80) InternalStart-UpCircuit InternalOscillator(1MHz) SHUTDOWNandRESET ReferenceSelection Si9110−1 Si9111−10 DESCRIPTION TheSi9110/9111areBiC/DMOSinte

SIHFD9110_V01

PowerMOSFET

SIHFR9110_V01

PowerMOSFET

•DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9110,SiHFR9110) •Straightlead(IRFU9110,SiHFU9110) •Availableintapeandreel •P-channel •Fastswitching