Power MOSFET

DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the

文件：222.71 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • For automatic insertion • Compact, end stackable • Fast switching • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The HVMDIP technology is the key to Vishay’s adva

文件：248.45 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET TRANSISTORS N-CHANNEL HEXDIP

50 Volt, 0.10 Ohm, 1-Watt HEXDIP HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieves very low on-state resistance combined with high transconductance and extreme device rugg

文件：238.94 Kbytes 页数：6 Pages

IRF

Power MOSFET

FEATURES • For automatic insertion • Compact, end stackable • Fast switching • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The HVMDIP technology is the key to Vishay’s adva

文件：248.45 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the

文件：222.71 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET TRANSISTORS N-CHANNEL HEXDIP

50 Volt, 0.10 Ohm, 1-Watt HEXDIP HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieves very low on-state resistance combined with high transconductance and extreme device rugg

文件：238.94 Kbytes 页数：6 Pages

IRF

Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)

文件：172.17 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件：1.13847 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • For Automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge

文件：421.42 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • For Automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge

文件：421.42 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司