HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

文件：409.06 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

文件：338.69 Kbytes 页数：2 Pages

ISC

无锡固电

100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

Infineon

英飞凌

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

文件：796.58 Kbytes 页数：11 Pages

IRF

丝印：FB4410Z；Package：TO-220；N-Ch 100V Fast Switching MOSFETs

Description The IRFB4410Z uses advanced trench technologyto provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 70 A RDS(ON)

文件：1.46878 Mbytes 页数：7 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

文件：839.58 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

文件：339.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

文件：339.34 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFETPower MOSFET

文件：300.42 Kbytes 页数：8 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：336.33 Kbytes 页数：12 Pages

IRF