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IRF9Z34NL

Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:162.29 Kbytes 页数:10 Pages

IRF

IRF9Z34NLPBF

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:1.1075 Mbytes 页数:11 Pages

IRF

IRF9Z34NPBF

HEXFET짰 POWER MOSFET

HEXFET® Power MOSFET

文件:245.08 Kbytes 页数:9 Pages

IRF

IRF9Z34NS

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:172.98 Kbytes 页数:11 Pages

IRF

IRF9Z34NS

Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:162.29 Kbytes 页数:10 Pages

IRF

IRF9Z34NSL

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:172.98 Kbytes 页数:11 Pages

IRF

IRF9Z34NSPBF

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:1.1075 Mbytes 页数:11 Pages

IRF

IRF9Z34NSTRRPBF

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:172.98 Kbytes 页数:11 Pages

IRF

IRF9Z34PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

文件:2.09213 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世

IRF9Z34PBF

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

文件:7.49754 Mbytes 页数:7 Pages

KERSEMI

技术参数

  • OPN:

    IRF9Z34NPBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    -55 V

  • RDS (on) @10V max:

    100 mΩ

  • ID @25°C max:

    -19 A

  • QG typ @10V:

    23.3 nC

  • Polarity:

    P

  • VGS(th) min:

    -2 V

  • VGS(th) max:

    -4 V

  • VGS(th):

    -3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
25+
TO-220
45000
IR全新现货IRF9Z34即刻询购立享优惠#长期有排单订
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
06+
TO-220
3000
自己公司全新库存绝对有货
询价
IR
24+
TO-220
500
询价
IR
2015+
DIP/SMD
19889
一级代理原装现货,特价热卖!
询价
IR/FSC
17+
TO-220
6200
询价
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
IR
24+
原厂封装
1000
原装现货假一罚十
询价
IR
24+/25+
300
原装正品现货库存价优
询价
IR
24+
原装
6980
原装现货,可开13%税票
询价
更多IRF9Z34供应商 更新时间2025-10-12 14:14:00