| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET Description The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processingof the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Dynamic d 文件：1.34911 Mbytes 页数：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A) Description The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processingof the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Surface M 文件：165.28 Kbytes 页数：6 Pages | IRF | IRF | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa 文件：200.45 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The D2PAK (T 文件：177.61 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa 文件：200.45 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa 文件：200.45 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFET Power MOSFET Description The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processingof the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Surface M 文件：1.0558 Mbytes 页数：9 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The D2PAK (T 文件：177.61 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The D2PAK (T 文件：177.61 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa 文件：200.45 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay |
技术参数
- 漏源电压（Vdss）：
200V
- 栅源极阈值电压（最大值）：
4V @ 250uA
- 漏源导通电阻（最大值）：
1.5 Ω @ 1.5A，10V
- 类型：
P 沟道
- 功率耗散（最大值）：
40W（Tc）
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILICONIX |
05+ |
原厂原装 |
4373 |
只做全新原装真实现货供应 |
询价 | ||
IR |
24+/25+ |
200 |
原装正品现货库存价优 |
询价 | |||
FSC |
24+ |
TO-220 |
25000 |
询价 | |||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
17+ |
TO-220 |
6200 |
询价 | |||
IR |
24+ |
原厂封装 |
1000 |
原装现货假一罚十 |
询价 | ||
哈里斯 |
25+ |
TO-220 |
2434 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
FSC |
22+ |
TO-220 |
5000 |
全新原装现货!自家库存! |
询价 | ||
INTERSIL |
25+ |
TO220 |
2987 |
绝对全新原装现货供应! |
询价 |
相关规格书
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
相关库存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
