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IRF830ASPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830ASTRL

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

IRF830ASTRLPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

IRF830ASTRLPBF

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF830ASTRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF830B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830B

Reducedcapacitiveswitchinglosses

FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

VishayVishay Siliconix

威世科技威世科技半导体

IRF830B

DSeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830BPBF

DSeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRF830APBF

  • 功能描述:

    MOSFET N-Chan 500V 5.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VISHAY/威世
24+
TO220
8950
BOM配单专家,发货快,价格低
询价
VISHAY
24+
TO-220
15000
全新原装的现货
询价
VISHAY
23+
TO-220
65400
询价
VISHAY
2021+
TO-220AB
9450
原装现货。
询价
Vishay(威世)
2249+
61534
二十余载金牌老企 研究所优秀合供单位 您的原厂窗口
询价
VISHAY(威世)
24+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
询价
VISHAY
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
VISHAY/威世
24+
TO-220AB
4445
只做原装/假一赔十/安心咨询
询价
VISHAY
24+/25+
TO-220AB
9600
原装正品现货库存价优
询价
VISHAY
07+
原厂原装
188250
全新原装 绝对有货
询价
更多IRF830APBF供应商 更新时间2025-7-22 16:36:00