IRF820中文资料2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET数据手册Renesas规格书
IRF820规格书详情
描述 Description
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17405.
特性 Features
• 2.5A, 500V
• rDS(ON) = 3.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
技术参数
- 型号：
IRF820
- 功能描述：
MOSFET N-Chan 500V 2.5 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
NEW |
TO220 |
18689 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
IR |
24+ |
TO-220 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
HI |
1923+ |
TO220 |
7823 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
IR |
24+ |
D2-Pak |
8866 |
询价 | |||
IR |
24+ |
DIP |
30617 |
一级代理全新原装热卖 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220A |
8215 |
原厂原装 |
询价 | ||
ST/意法 |
21+ |
TO220 |
1888 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
询价 | ||
ST/意法 |
22+ |
TO220 |
18000 |
原装正品 |
询价 | ||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
ST/意法 |
25+ |
TO-220 |
32360 |
ST/意法全新特价IRF820即刻询购立享优惠#长期有货 |
询价 |
