IRF820数据手册Renesas中文资料规格书
IRF820规格书详情
描述 Description
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17405.
特性 Features
• 2.5A, 500V
• rDS(ON) = 3.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
技术参数
- 型号：
IRF820
- 功能描述：
MOSFET N-Chan 500V 2.5 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
3750 |
原装现货,当天可交货,原型号开票 |
询价 | ||
onsemi(安森美) |
24+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
IR |
23+ |
FAX : 6564815466 |
20000 |
全新原装假一赔十 |
询价 | ||
HSMC |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST |
03+ |
TO-220 |
838 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
PH |
23+ |
TO-220 |
65480 |
询价 | |||
IR |
00+ |
TO-220 |
198 |
询价 | |||
IR |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
ST/意法 |
2023+ |
TO-220 |
6893 |
专注全新正品,优势现货供应 |
询价 |
