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IRFI740B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFI740G

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.4A)

Description ThirdGnerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapp

IRF

International Rectifier

IRFI740G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) •SinktoLeadCr

VishayVishay Siliconix

威世科技威世科技半导体

IRFI740G

PowerMOSFET

FEATURES •Isolatedpackage •Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) •Sinktoleadcreepagedistance=4.8mm •DynamicdV/dtrating •Lowthermalresistance •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thir

VishayVishay Siliconix

威世科技威世科技半导体

IRFI740GLC

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.7A)

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

IRF

International Rectifier

IRFI740GLC

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

VishayVishay Siliconix

威世科技威世科技半导体

IRFI740GLC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFI740GLCPBF

HEXFET짰PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

IRF

International Rectifier

IRFI740GLCPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

VishayVishay Siliconix

威世科技威世科技半导体

IRFI740GLCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRF740R

  • 制造商:

    Harris Corporation

供应商型号品牌批号封装库存备注价格
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-220
8000
只做原装现货
询价
IR
23+
TO-220
7000
询价
24+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
询价
FAIRCHILD
06+
原厂原装
9494
只做全新原装真实现货供应
询价
FAIRCHILD
2023+
SMD
5258
安罗世纪电子只做原装正品货
询价
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
询价
IR
23+
TO-263
35890
询价
IR
24+
TO-263
268
询价
IR
23+
TO263
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
更多IRF740R供应商 更新时间2025-5-25 14:00:00