N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：177.13 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：848.7 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

文件：65 Kbytes 页数：2 Pages

ISC

无锡固电

Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC

NJS

HEXFET Power MOSFET

Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：215.65 Kbytes 页数：9 Pages

IRF

Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFETMOSFETs combined with low forward drop Schottky results in an extremely efficient d

文件：216.2 Kbytes 页数：12 Pages

IRF

Dual FETKY Co-Packaged Dual MOSFET Plus Schottky Diode

Description The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFET®MOSFETs combined with low forward drop Schottky results in an extremely efficient d

文件：242.35 Kbytes 页数：12 Pages

IRF

HEXFET Power MOSFET

Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th

文件：200.2 Kbytes 页数：12 Pages

IRF

HEXFET Power MOSFET

文件：129.15 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance Dual N-Channel MOSFET

文件：220.51 Kbytes 页数：9 Pages

IRF