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IRF6618TR1中文资料IRF数据手册PDF规格书

PDF无图
厂商型号

IRF6618TR1

功能描述

HEXFET Power MOSFET

文件大小

170.43 Kbytes

页面数量

8

生产厂商

IRF

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-10-4 15:40:00

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IRF6618TR1规格书详情

描述 Description

The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.

• Application Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Low Profile (<0.7 mm)

• Dual Sided Cooling Compatible

• Compatible with Existing Surface Mount Techniques

产品属性

  • 型号:

    IRF6618TR1

  • 功能描述:

    MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商 型号 品牌 批号 封装 库存 备注 价格
IR
25+
PLL
860000
明嘉莱只做原装正品现货
询价
原厂
23+
SOT23-5
9000
原装正品,假一罚十
询价
INFINEON/英飞凌
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
INFINEON/英飞凌
22+
QFN
14100
原装正品
询价
IR
19+
PLL
20000
1450
询价
IR
22+
QFN
8000
原装正品支持实单
询价
Infineon Technologies
23+
DirectFET? Isometric MT
9000
原装正品,支持实单
询价
IR
2023+
PLL
50000
原装现货
询价
Infineon Technologies
23+
原装
8000
只做原装现货
询价
Infineon Technologies
23+
原装
7000
询价