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IRF6617TR1中文资料IRF数据手册PDF规格书
IRF6617TR1规格书详情
Description
The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
• Application Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible
• Compatible with Existing Surface Mount Techniques
产品属性
- 型号:
IRF6617TR1
- 功能描述:
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
996 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
23+ |
原厂封装 |
9896 |
询价 | |||
IR原装现货 |
0549+ |
LCC |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IOR |
25+23+ |
LCC |
13397 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IOR |
23+ |
DIRECTFE |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IOR |
24+ |
LCC |
966 |
询价 | |||
IOR |
2006 |
DIRECTFET |
898 |
原装现货海量库存欢迎咨询 |
询价 | ||
IOR |
21+ |
SMD |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
Infineon Technologies |
2022+ |
DirectFET? 等容 ST |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
询价 |