IRF6617中文资料IRF数据手册PDF规格书
IRF6617规格书详情
Description
The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
• Application Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible
• Compatible with Existing Surface Mount Techniques
产品属性
- 型号:
IRF6617
- 功能描述:
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
SMD |
23600 |
新进库存/原装 |
询价 | ||
IOR |
21+ |
SMD |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
Infineon/英飞凌 |
24+ |
MG-WDSON-5 |
25000 |
原装正品,假一赔十! |
询价 | ||
IR |
2019+ |
DirectFET |
3470 |
原厂渠道 可含税出货 |
询价 | ||
IR |
24+ |
DIRECTFET7 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
询价 | ||
IR |
23+ |
MICRO-8 |
8238 |
询价 | |||
IR |
24+ |
65230 |
询价 | ||||
IR |
1923+ |
QFN |
5000 |
正品原装品质假一赔十 |
询价 | ||
IR |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 |