IRF6613中文资料IRF数据手册PDF规格书
IRF6613规格书详情
Description
The IRF6613 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
• Application Specific MOSFETs
• Ideal for Synchronous Rectification in Isolated DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible
• Compatible with existing Surface Mount Techniques
产品属性
- 型号：
IRF6613
- 功能描述：
MOSFET 40V N-CH HEXFET 3.4mOhms 42nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
DIRECTFET |
6200 |
100%原装正品现货 |
询价 | ||
IR |
23+ |
DIRECTFET |
20000 |
原装正品现货 |
询价 | ||
Infineon/英飞凌 |
21+ |
MG-WDSON-5 |
6820 |
只做原装,质量保证 |
询价 | ||
INFINEON/英飞凌 |
24+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
24+ |
SOIC |
18500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
询价 | ||
IR |
24+ |
TO-220 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
IR |
18+ |
QFN |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
IR |
22+ |
SOIC |
8000 |
原装正品支持实单 |
询价 | ||
Infineon(英飞凌) |
2447 |
MG-WDSON-5 |
115000 |
4800个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
IR |
23+ |
QFN |
7000 |
询价 |
