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IRF6617TRPBF中文资料PDF规格书
IRF6617TRPBF规格书详情
Description
The IRF6617PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
• RoHS Compliant
• Lead-Free (Qualified up to 260°C Reflow)
• Application Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• High Cdv/dt Immunity
• Low Profile (<0.7mm)
• Dual Sided Cooling Compatible
• Compatible with existing Surface Mount Techniques
产品属性
- 型号:
IRF6617TRPBF
- 功能描述:
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
23+ |
MG-WDSON-5 |
12700 |
买原装认准中赛美 |
询价 | ||
Infineon/英飞凌 |
2023+ |
MG-WDSON-5 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
询价 | ||
IR |
17+ |
QFN |
6200 |
100%原装正品现货 |
询价 | ||
Infineon Technologies |
2022+ |
DirectFET? 等容 ST |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
INFINEON TECHNOLOGIES |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
询价 | ||
INFINEON/英飞凌 |
23+ |
SOP-8 |
89630 |
当天发货全新原装现货 |
询价 | ||
IR |
22+ |
SMD |
57455 |
郑重承诺只做原装进口货 |
询价 | ||
Infineon/英飞凌 |
MG-WDSON-5 |
6000 |
询价 | ||||
Infineon Technologies |
21+ |
DIRECTFET? ST |
4800 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
IR |
16+ |
原厂封装 |
78840 |
原装现货假一罚十 |
询价 |