IRF6618中文资料IRF数据手册PDF规格书
IRF6618规格书详情
描述 Description
The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
• Application Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible
• Compatible with existing Surface Mount Techniques
产品属性
- 型号:
IRF6618
- 功能描述:
MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
询价 | ||
IR |
2016+ |
SMD |
6813 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
INFINEON |
24+ |
NA |
19200 |
原装现货,专业配单专家 |
询价 | ||
IR |
18+ |
DirectFET |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
Infineon Technologies |
2022+ |
DirectFET? 等容 MT |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IR |
25+ |
950 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | |||
INFINEON/英飞凌 |
23+ |
QFN |
89630 |
当天发货全新原装现货 |
询价 | ||
INFINE0N |
21+ |
DirectFET MT |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
Infineon/英飞凌 |
25 |
MG-WDSON-5 |
6000 |
原装正品 |
询价 | ||
IR |
24+ |
原厂封装 |
66 |
原装现货假一罚十 |
询价 |