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IRF6618TR1中文资料IRF数据手册PDF规格书
IRF6618TR1规格书详情
Description
The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
• Application Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible
• Compatible with existing Surface Mount Techniques
产品属性
- 型号：
IRF6618TR1
- 功能描述：
MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
65230 |
询价 | ||||
IR |
1923+ |
NA |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
IR |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IRVISHAY |
24+ |
NA |
35000 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
INFINEON/英飞凌 |
24+ |
QFN |
9000 |
只做原装，欢迎询价，量大价优 |
询价 | ||
IR |
2022+ |
SMD |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
IR |
24+ |
PLL |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||
INFINEON/IR |
1907+ |
NA |
2000 |
20年老字号,原装优势长期供货 |
询价 | ||
INFINEON/英飞凌 |
23+ |
QFN |
11000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
INFINEON/英飞凌 |
24+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
