| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：167.38 Kbytes 页数：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：1.07107 Mbytes 页数：11 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：167.38 Kbytes 页数：11 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：167.38 Kbytes 页数：11 Pages | IRF | IRF | ||
N-Channel 100-V (D-S) MOSFET 文件：1.77683 Mbytes 页数：8 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
N-Channel MOSFET Transistor 文件：338.14 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
SEMICONDUCTORS 文件：2.43533 Mbytes 页数：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Isc N-Channel MOSFET Transistor 文件：299.81 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
ADVANCED PROCESS TECHNOLOGY 文件：208.79 Kbytes 页数：9 Pages | IRF | IRF | ||
丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor 文件：188.54 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC |
技术参数
- Maximum Power Dissipation：
125000mW
- Maximum Drain Source Voltage：
350V
- Maximum Continuous Drain Current：
10A
- Configuration：
Single
- Channel Type：
N
- Category：
Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-3 |
10000 |
询价 | |||
GE |
24+/25+ |
50 |
原装正品现货库存价优 |
询价 | |||
HARRIS |
05+ |
原厂原装 |
7185 |
只做全新原装真实现货供应 |
询价 | ||
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
IR |
22+ |
TO-3 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-3 |
52462 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
Infineon(英飞凌) |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
HARRIS |
2023+ |
SMD |
2921 |
安罗世纪电子只做原装正品货 |
询价 | ||
IR |
23+ |
TO-3 |
8000 |
专注配单,只做原装进口现货 |
询价 |
相关规格书
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
相关库存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
