| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：370.99 Kbytes 页数：13 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：370.99 Kbytes 页数：13 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：303.57 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：370.99 Kbytes 页数：13 Pages | IRF | IRF | ||
N-Channel MOSFET Transistor 文件：338.88 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
N -Channel Power MOSFET (55V/110A) 文件：543.27 Kbytes 页数：2 Pages | FS | FS | ||
Advanced Process Technology 文件：1.17944 Mbytes 页数：10 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology 文件：618.88 Kbytes 页数：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET 文件：609.74 Kbytes 页数：10 Pages | IRF | IRF | ||
Advanced Process Technology 文件：221.54 Kbytes 页数：8 Pages | IRF | IRF |
技术参数
- OPN：
IRF3205PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
55 V
- RDS (on) @10V max：
8 mΩ
- ID @25°C max：
110 A
- QG typ @10V：
97.3 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO-220/TO-263 |
50000 |
勤思达科技主营IR系列,全新原装正品,现货供应。 |
询价 | ||
IR |
新 |
进口原装 |
3000 |
库存现货 |
询价 | ||
IR |
TO-220 |
3200 |
专业分销全系列产品!绝对原装正品!量大可订!价格优 |
询价 | |||
FSC |
19+ |
TO-220 |
53800 |
询价 | |||
2015+ |
200 |
公司现货库存 |
询价 | ||||
IR |
24+ |
TO-220 |
100 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR/FSC |
24+ |
TO-220 |
9425 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
IR |
23+ |
TO-220 |
2800 |
原厂原装正品 |
询价 | ||
Infineon(英飞凌) |
24+ |
TO-220 |
8372 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 |
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