N -Channel Power MOSFET (55V/110A)

文件：543.27 Kbytes 页数：2 Pages

FS

MOS FET:Low Voltage

First Silicon

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

文件：160.74 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

文件：609.74 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

文件：618.88 Kbytes 页数：11 Pages

IRF