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IRF3205ZSPBF中文资料PDF规格书
IRF3205ZSPBF规格书详情
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号：
IRF3205ZSPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
1844+ |
SOT-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
IR |
22+23+ |
TO263 |
75981 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
IRC-TT |
24+25+/26+27+ |
TO-263-3 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IR |
19+ |
TO-263 |
74526 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 | ||
IR |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
IR |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
询价 | ||
IR |
23+ |
TO-263(D |
7300 |
专业优势供应 |
询价 | ||
IR |
24+ |
SOT-263 |
8100 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
VB |
D2PAK |
68900 |
原包原标签100%进口原装常备现货! |
询价 |
