SMPS MOSFET

Applications High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current

文件：120.97 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Applications High frequency DC-DC converters Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current

文件：129.46 Kbytes 页数：8 Pages

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

文件：149.46 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

文件：252.97 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

文件：252.97 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

文件：252.97 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

文件：252.97 Kbytes 页数：11 Pages

IRF

StrongIRFET™

Applications  UPS and Inverter applications  Half-bridge and full-bridge topologies  Resonant mode power supplies  DC/DC and AC/DC converters  OR-ing and redundant power switches  Brushed and BLDC Motor drive applications  Battery powered circuits Benefits  Improved Gate, Avalan

文件：1.06512 Mbytes 页数：17 Pages

Infineon

英飞凌

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED

文件：84.86 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel MOSFET Transistor

文件：338.69 Kbytes 页数：2 Pages

ISC

无锡固电