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IRF3007S

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

文件:252.97 Kbytes 页数:11 Pages

IRF

IRF3007S

丝印:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor

文件:189.03 Kbytes 页数:2 Pages

ISC

无锡固电

IRF3007SPBF

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

文件:252.97 Kbytes 页数:11 Pages

IRF

IRF3007SPBF

Ultra Low On-Resistance

文件:328.76 Kbytes 页数:11 Pages

IRF

IRF3007SPBF_15

Ultra Low On-Resistance

文件:328.76 Kbytes 页数:11 Pages

IRF

IRF3007S

N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

技术参数

  • OPN:

    IRF3007STRLPBF

  • Qualification:

    Non-Automotive

  • Package name:

    D2PAK

  • VDS max:

    75 V

  • RDS (on) @10V max:

    12.6 mΩ

  • ID @25°C max:

    62 A

  • QG typ @10V:

    89 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
22+
D2-PAK
9450
原装正品,实单请联系
询价
IR
17+
D2-Pak
31518
原装正品 可含税交易
询价
IR
05+
原厂原装
801
只做全新原装真实现货供应
询价
IR
12+
TO-263
15000
全新原装,绝对正品,公司现货供应。
询价
IR
24+
D2-Pak
8866
询价
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
20+
D2-Pak
36900
原装优势主营型号-可开原型号增税票
询价
INFINE0N
21+
D2PAK (TO-263)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
询价
IR
23+
TO-263
50000
全新原装正品现货,支持订货
询价
IR
2447
D2-PAK
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多IRF3007S供应商 更新时间2026-10-16 16:24:00