Advanced Process Technology

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Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

VDSS = 100V RDS(on) = 0.04Ω ID = 41A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that H

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Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)

VDSS = 100V RDS(on) = 0.04Ω ID = 22A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that H

文件：361.47 Kbytes 页数：8 Pages

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Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=24A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

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