丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：299.96 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

文件：429.6 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

文件：429.6 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：435.45 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：435.45 Kbytes 页数：11 Pages

IRF

60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard surface-mount power package\n• High-current carrying capability package (upto 195A, die-size;

Infineon

英飞凌

采用 TO-262 封装的 60V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS;

Infineon

英飞凌