HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

文件：429.6 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：435.45 Kbytes 页数：11 Pages

IRF

采用 TO-262 封装的 60V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS;

Infineon

英飞凌

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

文件：429.6 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：435.45 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤8.4mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.83 Kbytes 页数：2 Pages

ISC

无锡固电