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IRF1010EZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1010EZL

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZLPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZLPBF

AdvancedProcessTechnology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZPBF

AdvancedProcessTechnology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010EZS

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1010EZS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IRF1010ELPBF

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    HEXFET Power MOSFET

供应商型号品牌批号封装库存备注价格
IR
24+
TO-262-3
165
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
IR
22+
EQ-D2PAK
6000
终端可免费供样,支持BOM配单
询价
IR
23+
EQ-D2PAK
8000
专注配单,只做原装进口现货
询价
IR
23+
EQ-D2PAK
8000
专注配单,只做原装进口现货
询价
IR
23+
EQ-D2PAK
7000
询价
IR
23+
TO-220
50000
全新原装正品现货,支持订货
询价
INFINEON/英飞凌
2023+
TO-220
2000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
IR
24+
TO-220
60000
全新原装现货
询价
更多IRF1010ELPBF供应商 更新时间2025-7-25 16:30:00