AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

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IRF

Advanced Process Technology

文件：270.15 Kbytes 页数：9 Pages

IRF

Advanced Process Technology

文件：270.15 Kbytes 页数：9 Pages

IRF

HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP PHOTOCOUPLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：135.6 Kbytes 页数：12 Pages

NEC

瑞萨

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes 页数：20 Pages

TI

德州仪器

EIGHT DARLINGTON ARRAYS

Description The ULQ2801A-ULQ2804A each contain eight Darlington transistors with common emitters and integral suppression diodes for inductive loads. Each Darlington features a peak load current rating of 600 mA (500 mA continuous) and can withstand at least 50 V in the off state. Outputs may be

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STMICROELECTRONICS

意法半导体