零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MOSFET 600V CoolMOSª CM8 Power Transistor Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
600V CoolMOSª CFD7 Power Transistor Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages Benefits •Excellenthardcommutationrugg | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
600V CoolMOSª CFD7 Power Transistor Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages Benefits •Excellenthardcommutationrugg | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=77A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=24mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFET 600V CoolMOSª CM8 Power Transistor Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
600V CoolMOSª CSFD Power Transistor Features •Fastbodydiode •Industry-leadingreverserecoverycharge(Qrr) •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Costoptimization | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel MOSFET Transistor •DESCRITION •Suitableforhardandsoftswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤40mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V CoolMOS C6 Power Transistor 600VCoolMOSC6PowerTransistor Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •JEDEC1)qualified,Pb-freeplating,Halogenfree Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWMs | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS Power Transistor Features •WorldwidebestRds,oninTO247 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologies | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSTM Power Transistor Features •WorldwidebestRds,oninTO247 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CSCoolMOSisspeciallydesignedfor: •HardswitchingSMPStopologies | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤45mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS Power Transistor Features •WorldwidebestRds,oninTO247 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSTM Power Transistor Features •WorldwidebestRds,oninTO247 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CSCoolMOSisspeciallydesignedfor: •HardswitchingSMPStopologies | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
600V CoolMOSª CFD7 Power Transistor Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel MOSFET Transistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤70mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V CoolMOS짧 CFD7 Power Transistor Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
600V CoolMOS™ P6 Power Transistor MOSFET MetalOxideSemiconductorFieldEffectTransistor 600VCoolMOS™P6PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel MOSFET Transistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤70mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOSCPisdesignedfor: •HardswitchingSMPStopologiesforServeran | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
英飞凌 |
21+ |
PG-TO247-3 |
6000 |
绝对原裝现货 |
询价 | ||
INFINE0N |
21+ |
PG-TO247-3 |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
Infineon(英飞凌) |
2112+ |
PG-TO247-3 |
115000 |
240个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TO247-3 |
8800 |
公司只作原装正品 |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TO247-3 |
6000 |
原装现货正品 |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TO247-3 |
10000 |
原装,品质保证,请来电咨询 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON |
23+ |
TO247-3 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Infineon(英飞凌) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 |
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