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IPW60R016CM8

MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R024CFD7

600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages Benefits •Excellenthardcommutationrugg

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R024CFD7XKSA1

600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages Benefits •Excellenthardcommutationrugg

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R024P7

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=77A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=24mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPW60R037CM8

MOSFET 600V CoolMOSª CM8 Power Transistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroug

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R037CSFD

600V CoolMOSª CSFD Power Transistor

Features •Fastbodydiode •Industry-leadingreverserecoverycharge(Qrr) •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Costoptimization

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R040C7

N-Channel MOSFET Transistor

•DESCRITION •Suitableforhardandsoftswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤40mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPW60R041C6

600V CoolMOS C6 Power Transistor

600VCoolMOSC6PowerTransistor Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •JEDEC1)qualified,Pb-freeplating,Halogenfree Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWMs

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R045CP

CoolMOS Power Transistor

Features •WorldwidebestRds,oninTO247 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R045CP

CoolMOSTM Power Transistor

Features •WorldwidebestRds,oninTO247 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CSCoolMOSisspeciallydesignedfor: •HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R045CP

N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤45mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPW60R045CPA

CoolMOS Power Transistor

Features •WorldwidebestRds,oninTO247 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R045CS

CoolMOSTM Power Transistor

Features •WorldwidebestRds,oninTO247 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CSCoolMOSisspeciallydesignedfor: •HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R055CFD7

600V CoolMOSª CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R070C6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R070C6

N-Channel MOSFET Transistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤70mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPW60R070CFD7

600V CoolMOS짧 CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R070P6

600V CoolMOS™ P6 Power Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor 600VCoolMOS™P6PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW60R070P6

N-Channel MOSFET Transistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤70mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPW60R075CP

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOSCPisdesignedfor: •HardswitchingSMPStopologiesforServeran

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

供应商型号品牌批号封装库存备注价格
英飞凌
21+
PG-TO247-3
6000
绝对原裝现货
询价
INFINE0N
21+
PG-TO247-3
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
询价
Infineon(英飞凌)
2112+
PG-TO247-3
115000
240个/管一级代理专营品牌!原装正品,优势现货,长期
询价
Infineon/英飞凌
21+
PG-TO247-3
8800
公司只作原装正品
询价
Infineon/英飞凌
21+
PG-TO247-3
6000
原装现货正品
询价
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
Infineon/英飞凌
21+
PG-TO247-3
10000
原装,品质保证,请来电咨询
询价
INFINEON/英飞凌
23+
TO-247
50000
全新原装正品现货,支持订货
询价
INFINEON
23+
TO247-3
50000
全新原装正品现货,支持订货
询价
Infineon(英飞凌)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
更多IPW60R0供应商 更新时间2024-9-23 10:13:00