isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 77A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：372.98 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：60R024P7；Package：PG-TO247-3；600V CoolMOS짧 P7 Power Transistor

文件：1.38228 Mbytes 页数：14 Pages

Infineon

英飞凌

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensur Efficiency\n • 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG\nEase-of-use\n • Integrated ESD diode from 180mN and above RDS(on)s\n• Integrated gate resistor RG\n• Rugged body diode\n• Wide portfolio in through hole and surface mount packages\n• Both standard grade and industrial grade pa;

Infineon

英飞凌

600V CoolMOS??P7 Power Transistor

文件：1.23225 Mbytes 页数：14 Pages

Infineon

英飞凌