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IPU09N03LA

OptiMOS 2 Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPU09N03LA

OptiMOS 2 Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPU09N03LA

OptiMOS짰2 Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPU09N03LAG

OptiMOS짰2 Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPU09N03LBG

OptiMOS짰2 Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

09N03

25VN-ChannelEnhancementModeMOSFET

FEATURES •RDS(ON),VGS@10V,IDS@30A=9mΩ •RDS(ON),VGS@4.5V,IDS@30A=12mΩ •Advancedtrenchprocesstechnology •HighDensityCellDesignForUitraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent

PANJITPan Jit International Inc.

强茂強茂股份有限公司

09N03L

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

09N03LA

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

09N03LA

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

09N03LB

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

09N03LB

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

09N03LBG

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

09N03S

25VN-ChannelEnhancementModeMOSFET

FEATURES •RDS(ON),VGS@10V,IDS@30A=9mΩ •RDS(ON),VGS@4.5V,IDS@30A=12mΩ •Advancedtrenchprocesstechnology •HighDensityCellDesignForUitraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent

PANJITPan Jit International Inc.

强茂強茂股份有限公司

A09N03

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

A09N03N

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

B09N03

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

DTU09N03

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

DTU09N03

Halogen-freeAccordingtoIEC61249-2-21

DINTEK

DinTek Semiconductor Co,.Ltd

DTU09N03

N-Channel30V(D-S)MOSFETHalogen-free

DINTEK

DinTek Semiconductor Co,.Ltd

DTU09N03S

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半导体有限公司

详细参数

  • 型号:

    IPU09N03L

  • 制造商:

    INFINEON

  • 制造商全称:

    Infineon Technologies AG

  • 功能描述:

    OptiMOS 2 Power-Transistor

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
21+
TO-251
60000
原装正品进口现货
询价
INFINEON
12+
TO-251
15000
全新原装,绝对正品,公司现货供应。
询价
INFINEON
SOT251
57508
询价
INFINEON
2016+
TO251
2820
只做原装,假一罚十,公司可开17%增值税发票!
询价
INFINEON
23+
TO251
21000
专业优势供应
询价
INFINEON
1741+
TO251
6528
只做进口原装正品假一赔十!
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
INFINE0N
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
询价
INF
2019
TO-251-3
55000
原装正品现货假一赔十
询价
INFINEO
2020+
TO251-3
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
更多IPU09N03L供应商 更新时间2024-9-22 15:44:00