09N03S

25V N-Channel Enhancement Mode MOSFET

FEATURES •RDS(ON),VGS@10V,IDS@30A=9mΩ •RDS(ON),VGS@4.5V,IDS@30A=12mΩ •Advancedtrenchprocesstechnology •HighDensityCellDesignForUitraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent

A09N03

N-Channel30-V(D-S)MOSFET

A09N03N

N-Channel30-V(D-S)MOSFET

B09N03

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

DTU09N03

N-channelEnhancementModePowerMOSFET

Features VDS=30V,ID=80A RDS(ON)

DTU09N03

N-Channel30-V(D-S)MOSFET

DTU09N03

Halogen-freeAccordingtoIEC61249-2-21

DTU09N03

N-Channel30V(D-S)MOSFETHalogen-free

DTU09N03S

N-ChannelMOSFETusesadvancedtrenchtechnology

EMA09N03AN

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS25V RDSON(MAX.)9mΩ ID50A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree