25V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current

文件：142.69 Kbytes 页数：4 Pages

PANJIT

強茂

N-Channel 30-V (D-S) MOSFET

文件：1.01771 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：1.01771 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：230.34 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技