N-Channel 30-V (D-S) MOSFET

文件：1.73664 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：1.77236 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：09N03LA；Package：P-TO263-3-2；OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

文件：347.27 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：09N03LA；Package：P-TO262-3-1；OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

文件：347.27 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：09N03LA；Package：P-TO220-3-1；OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

文件：347.27 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel 30-V (D-S) MOSFET

文件：1.77236 Mbytes 页数：8 Pages

VBSEMI

微碧半导体