IPB65R110CFD规格书批发供应无锡固电ISC-114ic电子网

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IPB65R110CFD	文件：3.85934 Mbytes Page：20 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPB65R110CFD	文件：317.44 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor •FEATURES •WithTO-263(D2PAK)packaging •Ultra-fastbodydiode •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplication	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPB65R110CFDA	文件：2.33045 Mbytes Page：16 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPB65R110CFD7	文件：1.28016 Mbytes Page：14 Pages	650V CoolMOS짧 CFD7 SJ Power Device	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IIPP65R110CFD	文件：338.95 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.11Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IIPW65R110CFD	文件：335.75 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •SuitableforresonantSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤110mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPA65R110CFD	文件：3.85934 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPA65R110CFD	文件：314.54 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPI65R110CFD	文件：315.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.11Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPI65R110CFD	文件：3.85934 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPP65R110CFD	文件：3.85934 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPP65R110CFD	文件：338.95 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.11Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPP65R110CFDA	文件：2.33045 Mbytes Page：16 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPW65R110CFD	文件：3.85934 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPW65R110CFD	文件：3.85934 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPW65R110CFD	文件：335.75 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •SuitableforresonantSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤110mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPW65R110CFDA	文件：2.33045 Mbytes Page：16 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPX65R110CFD	文件：3.85934 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPX65R110CFDA	文件：2.33045 Mbytes Page：16 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司

详细参数

型号：
IPB65R110CFD
功能描述：
MOSFET N-Channel MOSFET 650V 110 mOhm
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市创芯联盈电子有限公司	IPB65R110CFD	INFINEON	1921++	长期排单	6750	原厂INF渠道,代理长期排单!	询价
深圳市英科美电子有限公司	IPB65R110CFD	INFINEON/英飞凌	2021+	TO-263	18109	原装进口假一罚十	询价
深圳市宏捷佳电子科技有限公司	IPB65R110CFD	Infineon	23+	TO263	12300	全新原装真实库存含13点增值税票!	询价
贸泽芯城（深圳）电子科技有限公司	IPB65R110CFD	Infineon(英飞凌)	22+	N/A	12000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳兆威电子有限公司	IPB65R110CFD	INFINEON/英飞凌	23+	TO263	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市明嘉莱科技有限公司	IPB65R110CFD	INFINEON TECHNOLOGIES AG	23+	SMD	918000	明嘉莱只做原装正品现货	询价
深圳市振宏微科技有限公司	IPB65R110CFD	Infineon(英飞凌)	23+	NA	7000	原装正品!假一罚十!	询价
深圳市凌特半导体科技有限公司	IPB65R110CFD	Infineon英飞凌专营		PG-TO263	9000	原装现货当天可交货,长期备货支持BOM配单账期	询价
深圳市特莱科技有限公司	IPB65R110CFD	INFINEON/英飞凌	21+23+	TO-263	5608	16年电子元件现货供应商终端BOM表可配单提供样品	询价
中天科工半导体（深圳）有限公司	IPB65R110CFD	原装	23+	NA	36014	热卖原装进口	询价

更多IPB65R110CFD供应商更新时间2024-4-23 15:00:00

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