丝印：65F6110；Package：PG-TO263；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

文件：3.85934 Mbytes 页数：20 Pages

Infineon

英飞凌

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

• FEATURES • With TO-263(D2PAK) packaging • Ultra-fast body diode • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching application

文件：317.44 Kbytes 页数：2 Pages

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

文件：2.33045 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：65R110F7；Package：PG-TO263-3；650V CoolMOS짧 CFD7 SJ Power Device

文件：1.28016 Mbytes 页数：14 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7\n 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation • 650V technology with integrated fast body diode\n• Limited voltage overshoot during hard commutation\n• Significant Qg reduction compared to 600V CFD technology\n• Tighter RDS(on) max to RDS(on) typ window\n• Easy to design-in\n• Lower price compared to 600V CFD technology\n\n优势:\n• Low switching ;

Infineon

英飞凌

集成快速体二极管的 650V CoolMOS ™ CFD7 超结 MOSFET 是谐振高功率拓扑的完美选择

英飞凌的 650V CoolMOS ™ CFD7 超结 MOSFET IPB65R110CFD7 采用 D2PAK 封装，非常适合工业应用中的谐振拓扑，例如服务器、电信、太阳能和电动汽车充电站，与竞争对手相比，它可以显著提高效率。作为 CFD2 SJ MOSFET 系列的后续产品，它具有降低的栅极电荷、改善的关断行为和降低的反向恢复电荷，可实现最高的效率和功率密度以及额外的 50V 击穿电压。 • CoolMOS ™ 7 系列\n• 低存储能量 COSS\n• 经过现场验证的 CoolMOS ™质量\n• 自 1998 年以来的 CoolMOS ™;

Infineon

英飞凌

20V-650V汽车级MOSFET

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ;

Infineon

英飞凌